gate turn-off thyristor ATG778 repetitive voltage up to 4500 v mean on-state current 760 a controllable on-state current 3000 a final specification surge on-state current 17 ka nov 06 - issue : 03 symbol characteristic conditions tj value unit c min typ max blocking v drm repetitive peak off-state voltage 4500 v v rrm repetitive peak reverse voltage 16 v i drm repetitive peak off-state current v d =vdrm r gk <2 ohm 125 100 ma i rrm repetitive peak reverse current v r =vrrm 10 ma (dv/dt) crit critical rate of rise of off-state volt age, min linear ramp up to 50% vdrm, shorted g-k 1000 v/us conducting i t (av) mean on-state current 180 sin, 50 hz,th=75c, doubl e side cooled 760 a i tsm surge on-state current sine wave, 10 ms, no reverse voltage 125 17 ka i2 t i2 t for fusing coordination 10ms, no reverse voltage 1445 a 2 s10 3 poseico spa power semiconductors italian corporation poseico poseico spa via pillea 42-44, 16153 genova - italy tel. +39 010 8599400 - fax +39 010 8682006 sales office: tel. +39 010 8599400 - fax +39 010 8681180 i2 t i2 t for fusing coordination 10ms, no reverse vo ltage 1445 a 2 s10 3 v t on-state voltage on-state current = 2000 a 25 3,4 v v t(to) threshold voltage 125 1,64 v r t on-state slope resistance 0,73 mohm switching on t gt gate controlled turn on time i t = 2500a; di/dt = 350a/us 10 us t d delay time i gm > 50a; di gr /dt = 25a/us 125 3 us e on turn-on switching energy v d = 2500v, c s = 4uf; r s = 5 ohm 2,8 j (di/dt) crit critical rate of rise of on-state curr ent i t = 3000a, i gm = 50a, di gr /dt = 25a/us 125 400 a/us switching off i tcm controllable peak on-state current 3000 a t gq gate controlled turn-off time i tc = i tcm , v dm =3500v 30 us t s storage time c s = 4uf, di gr /dt = 40 a/us 125 28 us e off turn-off switching energy ls = 0.28uh 8,5 j i rg turn-off reverse gate current 750 a v dsp spike voltage 950 v triggering v gt gate trigger voltage v d =24v 25 1,5 v i gt gate trigger current 25 3,0 a v rgm peak reverse gate voltage 25 16 v i rgm peak reverse leakage gate current v rg = v rgm 125 10 ma dissipation r th(j-h) thermal resistance junction to heatsink d.c. double side cooled 16 c/kw t vj virtual junction temperature 125 c t stg storage temperature -40 150 c mounting w weight 1300 g f mounting force 31 / 35 kn ordering information : ATG778 s 45 standard specification vdrm/100 standard specification vdrm/100
ATG778 gate turn-off thyristor final specification nov 06 - issue : 03 0 500 1000 1500 2000 2500 0,6 1,6 2,6 3,6 on-state current [a] on-state characteristic tj = 125 c 0 2 4 6 8 10 12 14 16 18 1 10 100 itsm [ka] surge characteristic tj = 125 c poseico spa power semiconductors italian corporation poseico distributed by 0,6 1,6 2,6 3,6 on-state voltage [v] 0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10 zth j-h [c/kw] t[s] transient thermal impedance double side cooled 1 10 100 ncycles all the characteristics given in this data sheet are guarant eed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. in the interest of product improvement poseico spa reserves the right to change any data given in this data sheet at any time without previous notice . any data given in this data sheet at any time without previous notice . if not stated otherwise the maximum value of ratings (simbol s over shaded background) and characteristics is reported.
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